MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647103295 A) filed by Hitachi Energy Ltd on August 27, 2026, for Semiconductor Device With An Integrated Heterojunction Diode And Method For Manufacturing.

Inventors include Wirths, Stephan; Knoll, Lars; Mihaila, Andrei; Romano, Gianpaolo; Naydenov, Kaloyan Ivaylov; Donato, Nazareno; and Udrea, Florin.

The application for the patent was published on September 18, 2026, under issue no. 38/2026.

Abstract: The invention relates to a semiconductor device (10) with an integrated heterojunc- tion diode (12) comprising: - a substrate (14) of a first conductive type acting as drain region, - a first crystalline layer (16) of a second conductivity type f...