Intellectual Property India Publishes Patent Application for Method And Device For Depositing N-Doped Sic

MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202617076102 A) filed by Aixtron Se on June 19, 2026, for Method And Device For Depositing N-Doped Sic.

Inventors include Booker, Pitsiri; Kppers, Philipp; Pfeffer, Michael Ulrich; and Subramaniam, Dinesh Kanna Number.

The application for the patent was published on July 10, 2026, under issue no. 28/2026.

Abstract: The invention relates to a method for depositing an SiC layer, wherein an NH3-containing first doping gas flow (D1), a second N2- containing doping gas flow (D2), a C2H4-containing first growth gas flow (Q1) and an HCl3Si-containing second growth gas flow (Q2) flow in a horizontal direction over a heated substrate. The two doping gas flow...