MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202647083289 A) filed by International Business Machines on July 07, 2026, for Local Backside Contact Isolation For Merged Backside Contact Patterning.
Inventors include Oyibo, Gideon; Li, Tao; Xie, Ruilong Number; and Loubet, Nicolas, Jean.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: A microelectronic structure including a first nanosheet transistor that includes a first source/drain. A second nanosheet transistor that is adjacent to the first nanosheet transistor and the second nanosheet transistor includes a second source/drain. A first backside contact connected to a backside surface of the f...