Intellectual Property India Publishes Patent Application for Impure Indium Phosphide Semiconductor Substrate On A Silicon Wafer

MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202647094369 A) filed by Qualcomm Incorporated on August 04, 2026, for Impure Indium Phosphide Semiconductor Substrate On A Silicon Wafer.

Inventors include Dutta, Ranadeep; Kim, Jonghae; and Lan, Je-Hsiung.

The application for the patent was published on August 07, 2026, under issue no. 32/2026.

Abstract: Aspects disclosed in the detailed description include an impure Indium Phosphide (InP) semiconductor substrate and a method of manufacturing the substrate. A semiconductor substrate comprises a silicon layer (302) and an impure InP layer (304) adjacent to the silicon layer. The impure InP layer (304) may be epitaxially grown on a Silicon (Si) nano...