Intellectual Property India Publishes Patent Application for High-Performance Cylindrical Gate-All-Around Nano-Field-Effect Transistor System For Rapid Carrier Switching And Its Fabrication Process Thereof

MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202631093330 A) filed by National Institute Of Technology Mizoram on July 31, 2026, for High-Performance Cylindrical Gate-All-Around Nano-Field-Effect Transistor System For Rapid Carrier Switching And Its Fabrication Process Thereof.

Inventors include Prof. Dr. Rudra Sankar Dhar; Dr. Rasmita Barik; Dr. Swagat Nanda; and Dr. Potaraju Yugender.

The application for the patent was published on September 18, 2026, under issue no. 38/2026.

Abstract: The cylindrical gate-all-around nano-field-effect transistor system and fabrication method are disclosed for rapid carrier switching. The system features a substrate (102) and a cylindrical core-shell nanowir...