MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202521004647 A) filed by Rajesh B. Morey; and Dr. Sunil N. Pawar on January 21, 2025, for Double Layer Centrally Located Structure Based On Ebg..
Inventors include Rajesh B. Morey; and Dr. Sunil N. Pawar.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: ABSTRACT Double layer centrally located structure based on EBG The present invention discloses a novel electromagnetic band gap (EBG) structure, termed Double Layer Centrally located Via (DLCV-EBG), designed for operation at 3.22 GHz. The structure comprises two substrate layers, each hosting a centrally located patch - a square patch on the first laye...