MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202541008652 A) filed by Moschip Technologies Limited on February 03, 2025, for Active Diode Circuit With Improved Fast-Transient Response.
Inventors include Murty Dvr; Rayudu Pnvnsrs; Rajat Chauhan; and Venkateswara Rao B.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: ABSTRACT ACTIVE DIODE CIRCUIT WITH IMPROVED FAST-TRANSIENT RESPONSE The present invention relates to a bias current boosting circuit for improving fast transient response in active diode based power management circuits. The circuit monitors an output voltage of an active diode relative to a corresponding input voltage and detects l...