Intellectual Property India Publishes Patent Application for A Radiation-Hardened 6t Sram Cell Using Rc-Based Seu Mitigation For Gaafet And Tigfet Technologies

MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202641115443 A) filed by Vallurupalli Nageswara Rao Vignana Jyothi Institute Of Engineering And Technology on September 26, 2026, for A Radiation-Hardened 6t Sram Cell Using Rc-Based Seu Mitigation For Gaafet And Tigfet Technologies.

Inventor includes Dr. S. Rajendra Prasad.

The application for the patent was published on October 02, 2026, under issue no. 40/2026.

Abstract: ABSTRACT [0031] As the technology in semiconductors shrinks, conventional SRAM cells are more prone to radiation-induced faults, especially Single Event Upsets (SEUs). This research explores the behavior of 6T SRAM cells implemented using Gate-All-Around Field Effect Transistors (...