Intellectual Property India Publishes Patent Application for A Radiation Dosimeter Based On Algan/Gan High Electron Mobility Transistor (hemt) Structure

MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202511021069 A) filed by Chairman, Defence Research & Development Organisation Drdo; and Director, Indian Institute Of Technology Jodhpur on March 08, 2025, for A Radiation Dosimeter Based On Algan/Gan High Electron Mobility Transistor (hemt) Structure.

Inventors include Vikas Pandey; Naresh Jinger; Surendra Singh Barala; Satyajit Sahu; and Mahesh Kumar.

The application for the patent was published on September 25, 2026, under issue no. 39/2026.

Abstract: The present disclosure relates to a radiation dosimeter (100) using AlGaN/GaN High Electron Mobility Transistor (HEMT) technology with a high-k dielectric material, specifically Barium Strontium T...