MUMBAI, India, April 20 -- Intellectual Property India has published a patent application (202514052062 A) filed by Proasia Semiconductor Corporation, Hsinchu, Taiwan, on May 29, 2025, for 'semiconductor structure and manufacturing method thereof.'
Inventor(s) include Su, Hsin-Ming; and Tsai, Ming-Yan.
The application for the patent was published on April 17, under issue no. 16/2026.
According to the abstract released by the Intellectual Property India: "A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure comprises a cell region, a junction terminal region, a street line and a passivation layer. The junction terminal region is disposed to surround the cell region and has a plurality of g...