Intellectual Property India Publishes Patent Application for 'Enhancement-Mode Gallium Nitride (GaN) Transistor on Silicon Carbide (SiC) with a Thin Buffer' Filed by Agnit Semiconductors Private Limited

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541032615 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on April 2, 2025, for 'enhancement-mode gallium nitride (gan) transistor on silicon carbide (sic) with a thin buffer.'

Inventor(s) include Sandeep Kumar; Richika Arya; Nithin; Hareesh Chandrasekar; Digbijoynath; and Terirama Thingujam.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The present invention discloses an enhancement-mode GaN High Electron Mobility Transistor (HEMT) on a silicon carbide (SiC) substrate with an ultra-thin buffer. By utilizing a SiC su...