India, Feb. 3 -- RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric vehicles (EVs), industrial power systems, and energy infrastructure.

Within the SiC diode family, MPS diodes represent a critical evolution beyond conventional SiC Schottky Barrier Diodes (SBDs). By integrating Schottky and PiN structures into a single, monolithic device, SiC MPS diodes overcome long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering superior real-world performance.

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