India, Oct. 2 -- DB HiTek, a leading 8-inch specialty foundry, announced that it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process, a next-generation power semiconductor platform. The company is also to offer a dedicated GaN MPW (multi-project wafer) program at the end of October.

Compared with traditional silicon-based power devices, GaN-based semiconductors deliver superior performance under high-voltage, high-frequency, and high-temperature operating conditions, offering exceptional power efficiency. In particular, 650V E-Mode GaN HEMT stands out for its high-speed switching performance and robust operational stability, making it well-suited for EV charging in...