ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,741, issued on June 23, was assigned to THE BOEING COMPANY (Arlington, Va.). "Hydrogen generator" was invented by Judd S. Carper (Arlington... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,742, issued on June 23, was assigned to DALIAN INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES (Dalian, China). "Compact portabl... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,743, issued on June 23, was assigned to GUANGZHOU RISING DRAGON RECREATION INDUSTRIAL Co. LTD. (Guangzhou, China). "Sodium hypochlorite gen... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,744, issued on June 23, was assigned to DYNELECTRO APS (Gadstrup, Denmark). "Systems and methods for generating synthesis gas for ammonia p... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,745, issued on June 23, was assigned to XERION ADVANCED BATTERY CORP. (Kettering, Ohio). "Methods for extracting lithium from spodumene" wa... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,746, issued on June 23, was assigned to Integran Technologies Inc. (Mississauga, Canada). "Articles comprising thermally stable, grain-refi... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,747, issued on June 23, was assigned to Redwood Materials Inc. (Carson City, Nev.). "Mounting structure for a rectifier circuit of an elect... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,748, issued on June 23, was assigned to SUMCO Corp. (Tokyo). "Silicon single crystal growing method" was invented by Takashi Izeki (Nagasak... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,749, issued on June 23, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan). "Methods for adding a plurality of dopant batches to an in... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,751, issued on June 23, was assigned to SILTRONIC AG (Munich). "Process for manufacturing semiconductor wafers containing a gas-phase epita... Read More