US Patent Issued to SILTRONIC on June 23 for "Process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber" (German Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,751, issued on June 23, was assigned to SILTRONIC AG (Munich).

"Process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber" was invented by Thomas Stettner (Waging am See, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber, involving removing, from the deposition chamber by etching the deposition chamber, material settled in the deposition chamber during preceding coating processes; performing successive coating operations in the etched deposition chamber, each of said coa...