ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,030, issued on Aug. 18, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory system and operating method thereof with... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,031, issued on Aug. 18, was assigned to Kioxia Corp. (Tokyo). "Memory system" was invented by Naoto Kumano (Yokohama, Japan) and Kenji Saku... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,032, issued on Aug. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Apparatus and methods for in-place read refresh for ... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,033, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho). "Dynamic read disturb handling using selective scanning" was... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,034, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho). "Managing program verify voltage offsets for charge coupling... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,035, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho). "Predictive program verification" was invented by Jungmi Ko ... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,036, issued on Aug. 18, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the same" was invent... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,037, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho). "Selective data pattern write scrub for a memory system" was... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,038, issued on Aug. 18, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor integrated circuit" was invented by Naohiro Nomura (Ky... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,039, issued on Aug. 18, was assigned to TAALAS INC. (Canada). "Multibit high density read only memory using multiple reference biases" was ... Read More