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US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... Read More


US Patent Issued to Intel on April 14 for "Two transistor capacitorless memory cell with stacked thin-film transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... Read More


US Patent Issued to Intel on April 14 for "Two transistor capacitorless memory cell with stacked thin-film transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... Read More


US Patent Issued to Intel on April 14 for "IC's with multple levels of embedded memory" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,481, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "IC's with multple levels of embedded memory" was invented by ... Read More


US Patent Issued to Intel on April 14 for "IC's with multple levels of embedded memory" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,481, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "IC's with multple levels of embedded memory" was invented by ... Read More


US Patent Issued to TDK on April 14 for "Magnetic domain wall moving element and magnetic recording array" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,482, issued on April 14, was assigned to TDK Corp. (Tokyo). "Magnetic domain wall moving element and magnetic recording array" was invente... Read More


US Patent Issued to TDK on April 14 for "Magnetic domain wall moving element and magnetic recording array" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,482, issued on April 14, was assigned to TDK Corp. (Tokyo). "Magnetic domain wall moving element and magnetic recording array" was invente... Read More