US Patent Issued to Intel on April 14 for "Two transistor capacitorless memory cell with stacked thin-film transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.).

"Two transistor capacitorless memory cell with stacked thin-film transistors" was invented by Noriyuki Sato (Hillsboro, Ore.), Abhishek A. Sharma (Hillsboro, Ore.), Van H. Le (Beaverton, Ore.) and Hui Jae Yoo (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are memory cells that include two transistors stacked above one another above a support structure where neither one of the transistors is coupled to a capacitor and where at least one of the two transistors is a thin-film transistor. In such 2T capacitorless memory cells, a first transisto...