US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

Posted On: 2026-09-08

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,217, issued on Sept. 8, was assigned to Wolfspeed Inc. (Durham, N.C.). "Gate trench power semiconductor devices having deep support shields... Read More

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery" (Japanese Inventor)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,218, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device with a first parallel pn structure ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,219, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea). "Semiconductor device including backside isolation stru... Read More

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,220, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistor device with bottom isol... Read More

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,221, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with backside self-aligned conduc... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,222, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,223, issued on Sept. 8, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsi... Read More

US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,224, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having macro cells" was invent... Read More

US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,225, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Gate-commuted thyristor cell with a base region having a... Read More

US Patent Issued to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY on Sept. 8 for "Transistor device and manufacturing method thereof" (Chinese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,226, issued on Sept. 8, was assigned to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY Co. LTD. (Suzhou, China). "Transistor device and manufac... Read More

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US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

US Patent Issued to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY on Sept. 8 for "Transistor device and manufacturing method thereof" (Chinese Inventors)