ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,629, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Efficient coordination of error handling and usage-based-di... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,630, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Nonvolatile memory device for performing ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,631, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device and method of operating the sa... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,632, issued on Sept. 8, was assigned to RAMBUS INC. (San Jose, Calif.). "Sense amplifier for active standby operation" was invented by Thom... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,633, issued on Sept. 8, was assigned to CXMT Corp. (Hefei City, China). "Semiconductor structure and method for manufacturing same, electro... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,634, issued on Sept. 8, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Operation device and solid-state imaging dev... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,635, issued on Sept. 8, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Delay circuitry based on pseudo-SRAM cells f... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,636, issued on Sept. 8, was assigned to NUMEM INC. (Sunnyvale, Calif.). "Reconfigurable compute memory having selection logic to control co... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,637, issued on Sept. 8, was assigned to Aril Computer Corp. (Los Altos, Calif.). "Multi-port static random-access memory (SRAM) with buffer... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,638, issued on Sept. 8, was assigned to Vervain LLC (Plano, Texas). "Lifetime mixed level non-volatile memory system" was invented by G. R.... Read More