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US Patent Issued to ROHM on Sept. 8 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,189, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Masaya Ueno (Kyoto, Japan). A... Read More


US Patent Issued to NEXPERIA on Sept. 8 for "Transfer device for transferring an electronic component" (German, Dutch Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,190, issued on Sept. 8, was assigned to NEXPERIA B.V. (Nijmegen, Netherlands). "Transfer device for transferring an electronic component" w... Read More


US Patent Issued to STMICROELECTRONICS on Sept. 8 for "Manufacturing process of an ohmic contact of a HEMT device and HEMT device" (Italian Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,191, issued on Sept. 8, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "Manufacturing process of an ohmic contact of a ... Read More


US Patent Issued to Silergy Semiconductor Technology (Hangzhou) on Sept. 8 for "Semiconductor device and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,192, issued on Sept. 8, was assigned to Silergy Semiconductor Technology (Hangzhou) LTD. (Hangzhou, China). "Semiconductor device and metho... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,193, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Semiconductor structure comprising... Read More


US Patent Issued to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE on Sept. 8 for "Nitride-based high electron mobility transistor and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,194, issued on Sept. 8, was assigned to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (Daejeon, South Korea). "Nitride-based high e... Read More


US Patent Issued to ROHM on Sept. 8 for "Nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,195, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Nitride semiconductor device" was invented by Isamu Nishimura (Kyoto... Read More


US Patent Issued to CONTEMPORARY AMPEREX TECHNOLOGY on Sept. 8 for "Adhesive tape for electrode tab and use thereof, attachment method, secondary battery, battery module, battery pack, and a powered device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,868, issued on Sept. 8, was assigned to CONTEMPORARY AMPEREX TECHNOLOGY Co. Ltd. (Ningde, China). "Adhesive tape for electrode tab and use ... Read More


US Patent Issued to Murata Manufacturing on Sept. 8 for "Secondary battery, electronic equipment, and electric tool" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,869, issued on Sept. 8, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan). "Secondary battery, electronic equipment, and electri... Read More


US Patent Issued to Zhuhai CosMX Battery on Sept. 8 for "Battery, manufacturing method thereof and electronic product" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,870, issued on Sept. 8, was assigned to Zhuhai CosMX Battery Co. Ltd. (Zhuhai, China). "Battery, manufacturing method thereof and electroni... Read More