US Patent Issued to ROHM on Sept. 8 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,189, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device" was invented by Masaya Ueno (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a principal surface, a semiconductor layer formed on the principal surface of the semiconductor substrate, the semiconductor layer including a first-conductivity-type low concentration layer in contact with the principal surface of the semiconductor substrate and a first-conductivity-type high concentration layer that is formed at a surface layer portion of a surface, which is on a side opposite to the prin...