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US Patent Issued to NEC on Sept. 8 for "Circuit manufacturing method and superconducting circuit" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,407, issued on Sept. 8, was assigned to NEC Corp. (Tokyo). "Circuit manufacturing method and superconducting circuit" was invented by Tomoh... Read More


US Patent Issued to Microsoft Technology Licensing on Sept. 8 for "Superconducting quantum interference devices and uses thereof" (Dutch Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,408, issued on Sept. 8, was assigned to Microsoft Technology Licensing LLC (Redmond, Wash.). "Superconducting quantum interference devices ... Read More


US Patent Issued to Quantum Designed Materials on Sept. 8 for "Superconducting compounds and methods for making the same" (Israeli Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,409, issued on Sept. 8, was assigned to Quantum Designed Materials Ltd. (Rehovot, Israel). "Superconducting compounds and methods for makin... Read More


US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Sept. 8 for "Hydrogen and hydrocarbon plasma treatment of phase change memory material" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,410, issued on Sept. 8, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Hydrogen and hydrocarbon plasma treatment of... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Phase change material switch with ovonic threshold switching material selector and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,411, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material switch with o... Read More


US Patent Issued to International Business Machines on Sept. 8 for "Metal ferroelectric insulator metal stack in RRAM" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,412, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Metal ferroelectric insulator metal stack in... Read More


US Patent Issued to BOE TECHNOLOGY GROUP on Sept. 8 for "Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,413, issued on Sept. 8, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Method for manufacturing a nanowire using an inducing par... Read More


US Patent Issued to Tokyo Electron on Sept. 8 for "Method for semiconductor processing" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,414, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Method for semiconductor processing" was invented by Hunter Frost (Al... Read More


US Patent Issued to Tokyo Electron, University of Yamanashi on Sept. 8 for "Film forming method and film forming apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,415, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo) and University of Yamanashi (Kofu, Japan). "Film forming method and fil... Read More


US Patent Issued to Applied Materials on Sept. 8 for "Sin gap fill via nucleation inhibition" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,416, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Sin gap fill via nucleation inhibition" was invented... Read More