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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,222, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More


US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,223, issued on Sept. 8, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsi... Read More


US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,224, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having macro cells" was invent... Read More


US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,225, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Gate-commuted thyristor cell with a base region having a... Read More


US Patent Issued to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY on Sept. 8 for "Transistor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,226, issued on Sept. 8, was assigned to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY Co. LTD. (Suzhou, China). "Transistor device and manufac... Read More


US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Silicon carbide semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,227, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manuf... Read More


US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 8 for "Nitride semiconductor device and method of manufacturing nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,228, issued on Sept. 8, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Niss... Read More


US Patent Issued to Intel on Sept. 8 for "Nanoribbon stacks without dielectric protection caps for top nanoribbons" (Oregon, Georgia Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,229, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Nanoribbon stacks without dielectric protection caps for top na... Read More


US Patent Issued to SK hynix on Sept. 8 for "Method for fabricating semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,230, issued on Sept. 8, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Method for fabricating semiconductor device" was invente... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Method of manufacturing semiconductor device with reduced cell width" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,231, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing semicon... Read More