US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... Read More

US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... Read More

US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... Read More

US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... Read More

US Patent Issued to Xidian University on April 14 for "Nanochannel gallium nitride-based device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,502, issued on April 14, was assigned to Xidian University (Xi'an, China). "Nanochannel gallium nitride-based device and manufacturing met... Read More

US Patent Issued to Xidian University on April 14 for "Nanochannel gallium nitride-based device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,502, issued on April 14, was assigned to Xidian University (Xi'an, China). "Nanochannel gallium nitride-based device and manufacturing met... Read More

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