US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor devices with embedded ferroelectric field effect transistors" was invented by Chia-Hao Chang (Hsinchu City, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu City, Taiwan), Bo-Feng Young (Taipei, Taiwan) and Yu-Ming Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, gate stacks, source/drain (S/D) features over the substrate, S/D contacts over the S/D features, and one or more dielectric layers over the gate stacks and the S/D contacts. A via structure penetrates th...