ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,677, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho). "Smooth RTT transition" was invented by Ryo Fujimaki (Sagami... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,678, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Dual-port memory structure with... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,679, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method, device, and circuit for mem... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,680, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and operat... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,681, issued on Oct. 20, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Backside metal track capacitance for write assist" was invente... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,682, issued on Oct. 20, was assigned to Arm Ltd. (Cambridge, Great Britain). "Storage device and method of performing read and write operat... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,683, issued on Oct. 20, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea). "Memory device based ... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,684, issued on Oct. 20, was assigned to Revol-Ver Inc. (Yongin-si, South Korea). "Configuration bit circuit for programmable logic device i... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,685, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device with content addressa... और पढ़ें
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,686, issued on Oct. 20, was assigned to Zeno Semiconductor Inc. (Cupertino, Calif.). "Content addressable memory device having electrically... और पढ़ें