US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 20 for "Dual-port memory structure with bit-line pairs located on different two level metal layers respectively" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,678, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Dual-port memory structure with bit-line pairs located on different two level metal layers respectively" was invented by Jhon-Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual-port memory structure includes a plurality of grouped-cells, a first bit-line pair and a second bit-line pair. The grouped-cells are in a word-line routing direction, wherein each grouped-cell comprises a plurality of dual-port memory cells adjacently disposed and is placed in the word-line routing direction. The dual-port memory cells of ea...