US Patent Issued to Micron Technology on Aug. 11 for "Techniques for multi-level chalcogenide memory cell programming" (Italian Inventors)

पोस्टेड ऑन: 2026-08-12

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,142, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Techniques for multi-level chalcogenide memory cell program... और पढ़ें

US Patent Issued to Synopsys on Aug. 11 for "Memristor-enabled programmable sensing and switching threshold adjustment" (Texas Inventor)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,143, issued on Aug. 11, was assigned to Synopsys Inc. (Sunnyvale, Calif.). "Memristor-enabled programmable sensing and switching threshold ... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device and electronic system" (South Korean Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,144, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system" ... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,145, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory devices and fabricat... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Nonvolatile memory device with reduced lateral charge" (South Korean Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,146, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Nonvolatile memory device with reduced la... और पढ़ें

US Patent Issued to SK hynix on Aug. 11 for "Memory device related to performing a read operation and method of operating the memory device" (South Korean Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,147, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device related to performing a read operation and m... और पढ़ें

US Patent Issued to SK hynix on Aug. 11 for "Semiconductor memory device for performing blind program operation and method of operating the same" (South Korean Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,148, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device for performing blind program o... और पढ़ें

US Patent Issued to Sandisk Technologies on Aug. 11 for "State dependent suspend-resume-go for performance improvement in a memory device" (California Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,149, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "State dependent suspend-resume-go for performance im... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" (Chinese Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,150, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Programming methods for memory devices, memor... और पढ़ें

US Patent Issued to SK hynix on Aug. 11 for "Storage device for determining memory cell type after data input during program operation and operating method thereof" (South Korean Inventors)

पोस्टेड ऑन: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,151, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Storage device for determining memory cell type after data... और पढ़ें

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US Patent Issued to Micron Technology on Aug. 11 for "Techniques for multi-level chalcogenide memory cell programming" (Italian Inventors)

US Patent Issued to Synopsys on Aug. 11 for "Memristor-enabled programmable sensing and switching threshold adjustment" (Texas Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device and electronic system" (South Korean Inventors)

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Nonvolatile memory device with reduced lateral charge" (South Korean Inventors)

US Patent Issued to SK hynix on Aug. 11 for "Memory device related to performing a read operation and method of operating the memory device" (South Korean Inventors)

US Patent Issued to SK hynix on Aug. 11 for "Semiconductor memory device for performing blind program operation and method of operating the same" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Aug. 11 for "State dependent suspend-resume-go for performance improvement in a memory device" (California Inventors)

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" (Chinese Inventors)

US Patent Issued to SK hynix on Aug. 11 for "Storage device for determining memory cell type after data input during program operation and operating method thereof" (South Korean Inventors)