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US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device with conductive layers in isolation structures" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,477, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device with conductive layer... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device with conductive layers in isolation structures" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,477, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device with conductive layer... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... और पढ़ें


US Patent Issued to Intel on April 14 for "Two transistor capacitorless memory cell with stacked thin-film transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... और पढ़ें


US Patent Issued to Intel on April 14 for "Two transistor capacitorless memory cell with stacked thin-film transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... और पढ़ें


US Patent Issued to Intel on April 14 for "IC's with multple levels of embedded memory" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,481, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "IC's with multple levels of embedded memory" was invented by ... और पढ़ें


US Patent Issued to Intel on April 14 for "IC's with multple levels of embedded memory" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,481, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "IC's with multple levels of embedded memory" was invented by ... और पढ़ें