US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "High electron mobility transistor and fabrication method thereof" (Taiwanese Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,228, issued on Sept. 1, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "High electron mobility transistor an... Read More

US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Sept. 1 for "Extended source/drain contact for shifted drain voltage for a backside power distribution network" (New York Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,229, issued on Sept. 1, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Extended source/drain contact for shifted dr... Read More

US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese, Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,230, issued on Sept. 1, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (China). "Metal-oxide-semiconductor field-effect trans... Read More

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and methods of manufacturing the semiconductor device" (South Korean Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,231, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and methods of manufacturing the se... Read More

US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Sept. 1 for "Fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,232, issued on Sept. 1, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan). "Fabrication method for increasing... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Complementary FET (CFET) devices and methods" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,233, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Complementary FET (CFET) devices an... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Fin isolation regions with improved depth distribution and methods forming the same" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,234, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Fin isolation regions with improved... Read More

US Patent Issued to Applied Materials on Sept. 1 for "Contact resistance reduction for direct backside contact" (Massachusetts Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,235, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Contact resistance reduction for direct backside con... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Semiconductor device with schottky barrier interface and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,236, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with schot... Read More

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,237, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabrica... Read More

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US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "High electron mobility transistor and fabrication method thereof" (Taiwanese Inventors)

US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Sept. 1 for "Extended source/drain contact for shifted drain voltage for a backside power distribution network" (New York Inventors)

US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese, Taiwanese Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and methods of manufacturing the semiconductor device" (South Korean Inventor)

US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Sept. 1 for "Fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Complementary FET (CFET) devices and methods" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Fin isolation regions with improved depth distribution and methods forming the same" (Taiwanese Inventors)

US Patent Issued to Applied Materials on Sept. 1 for "Contact resistance reduction for direct backside contact" (Massachusetts Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Semiconductor device with schottky barrier interface and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)