US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,230, issued on Sept. 1, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (China).

"Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance" was invented by Shuming Xu (Shanghai), Jian Wu (Shanghai) and ChinFu Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOSFET device includes a semiconductor substrate, serving as a drain region, and an epitaxial region disposed on an upper surface of the substrate. The MOSFET device includes multiple body regions formed in the epitaxial region, and multiple source regions. The body regions are disposed near an upper surface of the epit...