ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,264, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure including buried bit line ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,265, issued on Nov. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing vertical structures in three-dimension... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,266, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device" was invented b... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,267, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor device and method of forming the same" was inve... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,268, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device including recessed gate structure ha... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,269, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including peripheral insu... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,270, issued on Nov. 3, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France). "One-time programmable memory cell" was invented ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,271, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and method of manufacturing the semicon... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,272, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Method for pillar bending improvement by cut tiers pattern ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,273, issued on Nov. 3, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Nonvolatile memory with UV attenuating structural arrangement" was ... Read More