US Patent Issued to International Business Machines on April 14 for "Epitaxy everywhere based self-aligned direct backside contact" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,496, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Epitaxy everywhere based self-aligned dire... Read More

US Patent Issued to International Business Machines on April 14 for "Epitaxy everywhere based self-aligned direct backside contact" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,496, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Epitaxy everywhere based self-aligned dire... Read More

US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... Read More

US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... Read More

US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... Read More

US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... Read More

US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... Read More

US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... Read More

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