ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,382, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interfacial dual passivation layer fo... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,383, issued on May 12, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistors having stacked 2D material channel layers and heterog... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,384, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Enhanced-shaped extension region(s) for gate-all-around (GAA) field effec... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,385, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and methods of f... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,386, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device and manufacturing method of semicondu... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,387, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabricati... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,388, issued on May 12, was assigned to SiCrystal GmbH (Nuremberg, Germany). "Monocrystalline SiC substrates having an asymmetrical geometry ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,389, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet FET with controlled overlay mark" wa... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,390, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet stacks with dielectric isolation lay... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,391, issued on May 12, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Method for manufacturing semic... Read More