ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,394, issued on July 21, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Thin film transistor and ultrasonic imaging base board" w... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,395, issued on July 21, was assigned to Kioxia Corp. (Tokyo). "Magnetic memory device" was invented by Kenji Fukuda (Seoul, South Korea), T... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,396, issued on July 21, was assigned to Samsung Electronics Co. Ltd (Gyeonggi-do, South Korea). "Phase change heterostructure, and phase ch... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,397, issued on July 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Vertical 3D cross point memory" was invented by... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,398, issued on July 21, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.). "Transistor structure and methods of form... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,399, issued on July 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for filling a gap" was invented by ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,400, issued on July 21, was assigned to Versum Materials US LLC (Tempe, Ariz.). "Composition and methods using same for carbon doped silico... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,401, issued on July 21, was assigned to Resonac Corp. (Tokyo). "Etching gas, etching method, and method for producing semiconductor device"... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,402, issued on July 21, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan). "Surface treatment method, dry etching method, clean... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,403, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Halogen-free etching of silicon nitride" was invente... Read More