US Patent Issued to Samsung Electronics on July 21 for "Phase change heterostructure, and phase change memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,396, issued on July 21, was assigned to Samsung Electronics Co. Ltd (Gyeonggi-do, South Korea).

"Phase change heterostructure, and phase change memory device including the same" was invented by Hajun Sung (Suwon-si, South Korea), Youngjae Kang (Suwon-si, South Korea), Changyup Park (Hwaseong-si, South Korea), Kiyeon Yang (Suwon-si, South Korea), Wooyoung Yang (Suwon-si, South Korea), Changseung Lee (Suwon-si, South Korea) and Minwoo Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the pha...