ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,396, issued on July 21, was assigned to Samsung Electronics Co. Ltd (Gyeonggi-do, South Korea). "Phase change heterostructure, and phase ch... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,397, issued on July 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Vertical 3D cross point memory" was invented by... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,398, issued on July 21, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.). "Transistor structure and methods of form... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,399, issued on July 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for filling a gap" was invented by ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,400, issued on July 21, was assigned to Versum Materials US LLC (Tempe, Ariz.). "Composition and methods using same for carbon doped silico... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,401, issued on July 21, was assigned to Resonac Corp. (Tokyo). "Etching gas, etching method, and method for producing semiconductor device"... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,402, issued on July 21, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan). "Surface treatment method, dry etching method, clean... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,403, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Halogen-free etching of silicon nitride" was invente... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,404, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of selectively etching silicon nitride" was ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,405, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Purge system to clean wafer backside for ring suscep... और पढ़ें