US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Method to insulate contact plug with silicon carbon oxide and to insulate above bit line with silicon oxide by oxidating silicon carbon oxide" (Chinese Inventor)

Posted On: 2026-07-15

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,599, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Method to insulate contact plug with silico... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device having epitaxial layer on the active layer" (South Korean Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,600, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device having epitaxial... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device" (South Korean Inventors)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,601, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device" (South Korean Inventors)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,602, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More

US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor device with linered contact and method for fabricating the same" (Taiwanese Inventor)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,603, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with linered contact and me... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device and manufacturing method thereof" (South Korean Inventors)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,604, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and manufacturing metho... Read More

US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor structure using lining layer to prevent electrical connection between contacts and manufacturing method thereof" (Taiwanese Inventor)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,605, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure using lining layer to pr... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device and method for fabricating the same" (South Korean Inventors)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,606, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea). "Semiconductor memory device and method for f... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device" (South Korean Inventors)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,607, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device" was invented by Jun... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Semiconductor structure, and method for forming semiconductor structure" (Chinese Inventor)

Posted On: 2026-07-15

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,608, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, and method for for... Read More

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US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Method to insulate contact plug with silicon carbon oxide and to insulate above bit line with silicon oxide by oxidating silicon carbon oxide" (Chinese Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device having epitaxial layer on the active layer" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device" (South Korean Inventors)

US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor device with linered contact and method for fabricating the same" (Taiwanese Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device and manufacturing method thereof" (South Korean Inventors)

US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor structure using lining layer to prevent electrical connection between contacts and manufacturing method thereof" (Taiwanese Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device and method for fabricating the same" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Semiconductor structure, and method for forming semiconductor structure" (Chinese Inventor)