ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,650, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having unity buffers with output current limi... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,651, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices and electronic ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,652, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatus for small swing data transfer" was invented by Ha... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,654, issued on Sept. 1, was assigned to NORTHROP GRUMMAN SYSTEMS Corp. (Falls Church, Va.). "Leakage compensation circuit for content addre... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,655, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Redundancy and majority voting in a key-value data storage ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,656, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated circuitry, memory circuitry comprising strings o... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,657, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having tiers of memory cells and access line ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,658, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of performing program operation" ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,659, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Adaptively programming memory cells in different modes to o... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,660, issued on Sept. 1, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Writing method, reading method and memory devic... Read More