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US Patent Issued to Micron Technology on Oct. 27 for "Semiconductor memory device with per-channel alert of row hammer attack" (Idaho Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,362, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor memory device with per-channel alert of row h... Read More


US Patent Issued to UIF (University Industry Foundation), Yonsei University on Oct. 27 for "Input offset detection amplification circuit and semiconductor memory device including same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,363, issued on Oct. 27, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea). "Input offset detecti... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Write clock bias generator configured to compensate for change of threshold voltage of transistor according to change of temperature and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,364, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Write clock bias generator configured to com... Read More


US Patent Issued to ARM on Oct. 27 for "Increased throughput for reads in static random access memory" (Indian, American Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,365, issued on Oct. 27, was assigned to ARM Ltd. (Cambridge, Great Britain). "Increased throughput for reads in static random access memory... Read More


US Patent Issued to TetraMem on Oct. 27 for "Crossbar circuits including RRAM devices with minimized write disturbances" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,366, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Crossbar circuits including RRAM devices with minimized write di... Read More


US Patent Issued to TetraMem on Oct. 27 for "Voltage replica circuits for RRAM-based crossbar circuits" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,367, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Voltage replica circuits for RRAM-based crossbar circuits" was i... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Reconfigurable in-memory physically unclonable function device and method of operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,368, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Reconfigurable in-memory physic... Read More


US Patent Issued to Micron Technology on Oct. 27 for "Select gate transistor with segmented channel fin" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,369, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Select gate transistor with segmented channel fin" was inve... Read More


US Patent Issued to Micron Technology on Oct. 27 for "Memory pillar selection transistor evaluation" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,370, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory pillar selection transistor evaluation" was invented... Read More


US Patent Issued to NVIDIA on Oct. 27 for "Fast, area efficient wordline decoding scheme" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,371, issued on Oct. 27, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Fast, area efficient wordline decoding scheme" was invented by... Read More