US Patent Issued to TetraMem on Oct. 27 for "Voltage replica circuits for RRAM-based crossbar circuits" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,367, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.).

"Voltage replica circuits for RRAM-based crossbar circuits" was invented by Wenbo Yin (Alameda, Calif.) and Hengfang Zhu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides memristor-based crossbar circuits. A crossbar circuit may include a crossbar array of cross-point devices connecting to intersecting word lines and bit lines. The crossbar circuit further includes a first readout circuit configured to generate an output voltage representing a sum of currents flowing through a bit line connecting to one or more of the cross-point d...