ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,360, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Two-stage voltage calibration upon power-up of memory devic... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,361, issued on Oct. 27. "Interrupt-driven content protection of a memory device" was invented by Gil Golov (Backnang, Germany). According ... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,362, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor memory device with per-channel alert of row h... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,363, issued on Oct. 27, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea). "Input offset detecti... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,364, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Write clock bias generator configured to com... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,365, issued on Oct. 27, was assigned to ARM Ltd. (Cambridge, Great Britain). "Increased throughput for reads in static random access memory... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,366, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Crossbar circuits including RRAM devices with minimized write di... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,367, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.). "Voltage replica circuits for RRAM-based crossbar circuits" was i... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,368, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Reconfigurable in-memory physic... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,369, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Select gate transistor with segmented channel fin" was inve... और पढ़ें