US Patent Issued to PHISON ELECTRONICS on June 2 for "Memory management method, memory storage device and memory control circuit unit with capability to reduce bit error rate of data" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,552, issued on June 2, was assigned to PHISON ELECTRONICS CORP. (Miaoli, Taiwan). "Memory management method, memory storage device and memor... Read More

US Patent Issued to Micron Technology on June 2 for "Read margin health evaluations for memory systems" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,553, issued on June 2, was assigned to Micron Technology Inc. (Boise, Idaho). "Read margin health evaluations for memory systems" was invent... Read More

US Patent Issued to SK hynix on June 2 for "Memory and operation method thereof" (South Korean Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,554, issued on June 2, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory and operation method thereof" was invented by Sang ... Read More

US Patent Issued to Yangtze Memory Technologies on June 2 for "Memory and operating method thereof, memory system and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,555, issued on June 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory and operating method thereof, memory sys... Read More

US Patent Issued to Rambus on June 2 for "Low overhead refresh management of a memory device" (California Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,556, issued on June 2, was assigned to Rambus Inc. (San Jose, Calif.). "Low overhead refresh management of a memory device" was invented by ... Read More

US Patent Issued to Micron Technology on June 2 for "Generating access line voltages" (American, German Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,557, issued on June 2, was assigned to Micron Technology Inc. (Bosie, Idaho). "Generating access line voltages" was invented by Martin Brox ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 2 for "Memory device including sense amplifier and method of storing data thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,558, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Memory device including sense amplifier and... Read More

US Patent Issued to NANYA TECHNOLOGY on June 2 for "Dynamic random-access memory (DRAM) device" (Taiwanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,559, issued on June 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Dynamic random-access memory (DRAM) device" was in... Read More

US Patent Issued to NANYA TECHNOLOGY on June 2 for "Data verification device and data verification method" (Taiwanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,560, issued on June 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Data verification device and data verification met... Read More

US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on June 2 for "SRAM memory with random deterministic initialization" (French Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,561, issued on June 2, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "SRAM memory with random dete... Read More

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