ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,558, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device including sense amplifier and method of storing data thereof" was invented by Changyoung Lee (Suwon-si, South Korea) and Young Seok Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including memory cells, a single-ended bitline sense amplifier connected to the memory cells through a bitline and a complementary bitline, and electrically connected through one of the bitline or the complementary bitline in response to the memory cells being activated. A DSI circuit is config...