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US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Pre-charger circuit of memory device and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,542, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Pre-charger circuit of memory device ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on June 2 for "Memory device having tracking word line with adjust circuit, method of operating same and method of manufacturing same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,543, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... Read More


US Patent Issued to Rambus on June 2 for "High performance, non-volatile memory module" (California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,544, issued on June 2, was assigned to Rambus Inc. (San Jose, Calif.). "High performance, non-volatile memory module" was invented by Freder... Read More


US Patent Issued to Kioxia on June 2 for "Memory device" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,545, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Akira Katayama (Yokohama Kanagawa, Japan). Acc... Read More


US Patent Issued to Sandisk Technologies on June 2 for "Read for memory cell with threshold switching selector" (Arizona, Idaho, California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,546, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Read for memory cell with threshold switching selector... Read More


US Patent Issued to Kioxia on June 2 for "Memory device" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,547, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Kosuke Hatsuda (Tokyo). According to the abstr... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Power supply generator assist" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,548, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Power supply generator assist" was in... Read More


US Patent Issued to Kepler Computing on June 2 for "Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor" (Oregon, California, Washington, North Carolina Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,549, issued on June 2, was assigned to Kepler Computing Inc. (San Francisco). "Non-linear polar material based multi-capacitor bit-cell with... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 2 for "Memory circuit and method of operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,550, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory circuit and method of oper... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Gain cell memory device using enhanced sensing scheme and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,551, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gain cell memory device using enhance... Read More