ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,542, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Pre-charger circuit of memory device ... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,543, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,544, issued on June 2, was assigned to Rambus Inc. (San Jose, Calif.). "High performance, non-volatile memory module" was invented by Freder... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,545, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Akira Katayama (Yokohama Kanagawa, Japan). Acc... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,546, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Read for memory cell with threshold switching selector... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,547, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Kosuke Hatsuda (Tokyo). According to the abstr... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,548, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Power supply generator assist" was in... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,549, issued on June 2, was assigned to Kepler Computing Inc. (San Francisco). "Non-linear polar material based multi-capacitor bit-cell with... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,550, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory circuit and method of oper... Read More
ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,551, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gain cell memory device using enhance... Read More