US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Pre-charger circuit of memory device and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,542, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Pre-charger circuit of memory device and methods for operating the same" was invented by Masaya Hamada (Hsinchu, Taiwan), Takumi Hara (Hsinchu, Taiwan) and Makoto Yabuuchi (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a plurality of first memory cells. The plurality of first memory cells are operatively coupled to a first bit line. The memory circuit further includes a first pre-charge circuit connected to a first end of the first bit line and configured to charge the first bit line to a supply voltage dur...