ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,476, issued on April 14, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device and manufacturing method thereo... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,477, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device with conductive layer... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,477, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device with conductive layer... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,478, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and electronic... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,479, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Two transistor capacitorless memory cell with stacked thin-fi... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and m... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,481, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "IC's with multple levels of embedded memory" was invented by ... Read More