ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,471, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device and manufacturing method of ... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,472, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including stack struc... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,472, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including stack struc... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,473, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and manufacturing method thereof"... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,473, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and manufacturing method thereof"... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,474, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Trench patterning process using microcracking" was... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,474, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Trench patterning process using microcracking" was... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,475, issued on April 14, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Memory structure and manufacturing method there... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,475, issued on April 14, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Memory structure and manufacturing method there... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,476, issued on April 14, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device and manufacturing method thereo... Read More