ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,475, issued on April 14, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Memory structure and manufacturing method thereof" was invented by Chia-Wen Wang (Tainan City, Taiwan), Chien-Hung Chen (Hsinchu City, Taiwan), Chia-Hui Huang (Tainan City, Taiwan), Ling Hsiu Chou (Tainan City, Taiwan), Jen Yang Hsueh (Tainan City, Taiwan) and Chih-Yang Hsu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is loc...